View BAS40SDW_4121479.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

BAS40TW/ADW/CDW/SDW/RDW
SURFACE MOUNT SCHOTTKY DIODE ARRAYS
These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 (SC70-6L)
4 5 6 2 1 3
FEATURES
Maximum forward voltage @ 10mA of 0.5V Maximum leakage current @ 25V of 1.0uA Reverse voltage rating of 40V Also available in lead-free plating (100% matte tin finish)
APPLICATIONS
Rail-to-rail ESD protection Overshoot and undershoot switching control Mobile phones and accessories Video game consoles connector ports
BAS40TW
Isolated Triple
SOT- 363 Various Configurations (See Diagrams Below)
BAS40ADW
Common Anode
BAS40CDW
Common Cathode
BAS40SDW
Series
BAS40RDW
Reverse Series
6
5
4
6
5
4
6
5
4
6
5
4
6
5
4
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
Marking Code: S40
Marking Code: S42
Marking Code: S43
Marking Code: S44
Marking Code: S45
MAXIMUM RATINGS (Per Diode) TJ = 25C Unless otherwise noted
Rating Repetitive Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Non-repetitive Peak Forward Current, t = 1sec, Square Wave Total Power Dissipation (Note 1) Operating Junction Temperature Range Storage Temperature Range
Note 1. FR-5 Board 1.0 x 0.75 x 0.062 in.
Symbol VRRM VR IF I FSM P tot TJ Tstg
Value 40 40 200 600 225 -55 to 125 -65 to 125
Units V V mA mA mW C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Symbol R thetaJA Value 556 Units C/W
8/10/2005
Page 1
www.panjit.com
BAS40TW/ADW/CDW/SDW/RDW
ELECTRICAL CHARACTERISTICS (Per Diode) Tj = 25C Unless otherwise noted
Parameter Breakdown Voltage (Note 1) Symbol V BR VF IR CT t rr Conditions I BR = 10uA I F = 1.0mA Forward Voltage (Note 1) Reverse Leakage Current (Note 1) Total Capacitance Reverse Recovery Time (See Figure 1) I F = 10mA I F = 40mA V R = 25V 0Vdc Bias, f =1 MHz I F = 10mA, I R = 10mA R L= 100 Ohms; measured at IRrec = 1mA Min 40 Typ Max 380 500 1000 1.0 5.0 5.0 uA pF ns mV Units V
Note 1. Short duration pulse to minimize self-heating effect
820 +10 V 2 .0 k 100 H 0 .1 F IF 0 .1 F
?
DUT
5 0 O u tp u t P u ls e G e n e ra to r
5 0 In p u t S a m p li n g O s c il lo s c o p e
Notes: 1. A 2.0k variable resistor adjusted for a forward current (IF) to 10mA 2. Input pulse is adjusted to IR(peak) is equal to 10mA
Figure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT
8/10/2005
Page 2
www.panjit.com
BAS40TW/ADW/CDW/SDW/RDW
TYPICAL CHARACTERISTIC CURVES (Per Diode)
100
100
T A = 125 C
(uA)
T A = 125 C
R
10
T A = 75 C
(mA)
Reverse Leakage Current, I
F
10
Forward Current, I
1
1
T A = 75 C
T A = -25 C
0.1
T A = 25 C
0.01
T A = -25 C
T A = 25 C
0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
0.001 0 10 20 30 40
Forward Voltage , VF (V)
Reverse Voltage, V R (V)
Fig. 2. Typical Forward Characteristics
Fig. 3. Typical Reverse Characteristics
4 3.5 3 2.5 2 1.5 1 0.5 0 0 10 20
Reverse Voltage, VR (V)
Total Capacitance, C T (pF)
30
40
Fig. 4. Typical Capacitance
8/10/2005
Page 3
www.panjit.com
BAS40TW/ADW/CDW/SDW/RDW
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
ORDERING INFORMATION
BAS40xxx T/R7 - 7" reel, 3K units per reel BAS40xxx T/R13 - 13" reel, 10K units per reel
Copyright PanJit International, Inc 2005
The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others.
8/10/2005
Page 4
www.panjit.com

▲Up To Search▲

Price & Availability of BAS40SDW

	To Download BAS40SDW Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .